This category lists SGS-Thomson Datasheets service manuals schematic diagrams and links to owner manuals and repair sites. If the SGS-Thomson Datasheets information you are looking for is not listed here please use the forums and we will try and add it for you.
ST BAT 41 SMALL SIGNAL SCHOTTKY DIODE General purpose metal to silicon diode featuring
very low turn-on voltage and fast switching.
This device has integrated protection against excessive
voltage such as electrostatic discharges.
ST BAT 49 SMALL SIGNAL SCHOTTKY DIODE General purpose metal to silicon diode featuring
very low turn-on voltage and fast switching.
This device has integrated protection against excessive
voltage such as electrostatic discharges.
ST BC393 The BC393 is a silicon planar epitaxial PNP transistor
in Jedec TO-18metal case, designed forgeneral
purpose high-voltage and video amplifier applications.
ST BC394 The BC394is a silicon planar epitaxial NPNtransistor
in Jedec TO-18metal case, designed forgeneral
purpose high-voltage and video amplifier applications.
The complementary PNP type is the BC393.
ST BTW 69 (N) SCR The BTW 69 (N) Family of Silicon Controlled Rectifiers
uses a high performance glass passivated
technology.
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supplies up to
400Hz on resistive or inductive load.
ST BU208A The BU208A, BU508A and BU508AFI are
manufactured using Multiepitaxial Mesa
technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds.
ST BU208D The BU208D, BU508D and BU508DFI are
manufactured using Multiepitaxial Mesa
technology for cost-effective high performance
and uses a Hollow Emitter structure to enhance
switching speeds.
ST BU508A The BU208A, BU508A and BU508AFI are
manufactured using Multiepitaxial Mesa
technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds.
ST BU508AFI The BU208A, BU508A and BU508AFI are
manufactured using Multiepitaxial Mesa
technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds.
ST BU508D The BU208D, BU508D and BU508DFI are
manufactured using Multiepitaxial Mesa
technology for cost-effective high performance
and uses a Hollow Emitter structure to enhance
switching speeds.
ST BU508DFI The BU208D, BU508D and BU508DFI are
manufactured using Multiepitaxial Mesa
technology for cost-effective high performance
and uses a Hollow Emitter structure to enhance
switching speeds.
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